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1. product profile 1.1 general description 100 w ldmos power transistor for base st ation applications at frequencies from 2000 mhz to 2200 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation (2000 mhz to 2200 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 2000 mhz to 2200 mhz frequency range blf7g22l-100p; BLF7G22LS-100P power ldmos transistor rev. 2 ? 10 november 2011 preliminary data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 720 28 20 19.1 28.5 ? 34 [1]
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 2 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol blf7g22l-100p (sot1121a) 1d r a i n 1 2d r a i n 2 3g a t e 1 4g a t e 2 5s o u r c e [1] BLF7G22LS-100P (sot1121b) 1drain1 2drain2 3gate1 4gate2 5source [1] 2 4 5 3 1 4 3 5 1 2 sym117 4 5 3 21 4 3 5 1 2 sym117 table 3. ordering information type number package name description version blf7g22l-100p - flanged ldmost ceramic package; 2 mounting holes; 4 leads sot1121a BLF7G22LS-100P - earless flanged ldmost ceramic package; 4 leads sot1121b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 3 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf7g22l-100p and BLF7G22LS-100P are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =720ma; p l = 100 w (cw); f = 2110 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 20 w 0.36 k/w table 6. characteristics t j = 25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.6 ma 65 70 - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 60 ma 1.5 2 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 2 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -12.3-a i gss gate leakage current v gs =11 v; v ds = 0 v - - 200 na g fs forward transconductance v ds =10v; i d =60ma - 530 - ms r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 2100 ma -240-m ? table 7. functional test information test signal: 2-carrier w-cdma; par = 8.4 db at 0.01 % probability on t he ccdf; 3gpp test model 1, 1-64 pdpch; f 1 = 2112.5 mhz; f 2 =2117.5mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds =28v; i dq =720ma; t case =25 ? c; 2 sections combined unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit p l(av) average output power - 20 - w g p power gain p l(av) =20w 17.8 19.1 - db rl in input return loss p l(av) =20w - ? 16 ? 9db ? d drain efficiency p l(av) =20w 24 28.5 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) =20w - ? 34 ? 28 dbc
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 4 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 7.2 impedance information table 8. typical push-pull impedance measured load pull data. typical values unless otherwise specified. f z s z l mhz ? ? 2110 1.79 ?? j4.95 2.27 ? j3.64 2140 2.37 ? j5.49 2.27 ?? j3.64 2170 2.54 ? j5.86 1.84 ??? j3.57 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 5 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 7.3 one tone cw 7.4 one tone cw-pulsed v ds = 28 v; i dq = 720 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 2. power gain and drain efficiency as function of load power; typical values 0 10 20 30 40 50 60 70 d (%) d p l (dbm) 36 52 48 40 44 aaa-001309 g p (db) g p 0 5 10 15 20 25 30 35 (1) (2) (3) v ds = 28 v; i dq = 720 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 3. power gain and drain efficiency as function of load power; typical values 0 10 20 30 40 50 60 70 d (%) d p l (dbm) 36 52 48 40 44 aaa-001310 g p (db) g p 0 5 10 15 20 25 30 35 (1) (2) (3)
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 6 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 7.5 1-carrier w-cdma v ds = 28 v; i dq = 720 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 4. power gain and drain efficiency as function of load power; typical values v ds = 28 v; i dq = 720 ma. (1) f = 2110 mhz; f + 5 mhz (2) f = 2140 mhz; f + 5 mhz (3) f = 2170 mhz; f + 5 mhz (4) f = 2110 mhz; f ? 5 mhz (5) f = 2140 mhz; f ? 5 mhz (6) f = 2170 mhz; f ? 5 mhz v ds = 28 v; i dq = 720 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 5. adjacent channel power ratio ( ? 5 mhz) as a function of load power; typical values fig 6. peak-to-average ratio as a function of load power; typical values 0 10 20 30 40 50 60 70 d (%) d aaa-001311 g p (db) g p 0 5 10 15 20 25 30 35 p l (dbm) 36 48 44 40 (1) (2) (3) aaa-001312 -70 -50 -30 -10 (5) (4) (3) (2) (6) p l (dbm) 36 48 44 40 acpr 5m (dbc) (1) p l (dbm) 36 48 44 40 4 2 6 8 par (db) 0 aaa-001313 (2) (1) (3)
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 7 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 7.6 2-carrier w-cdma v ds = 28 v; i dq = 720 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 7. power gain and drain efficiency as function of load power; typical values v ds = 28 v; i dq = 720 ma. (1) f = 2110 mhz; f + 5 mhz (2) f = 2140 mhz; f + 5 mhz (3) f = 2170 mhz; f + 5 mhz (4) f = 2110 mhz; f ? 5 mhz (5) f = 2140 mhz; f ? 5 mhz (6) f = 2170 mhz; f ? 5 mhz v ds = 28 v; i dq = 720 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 8. adjacent channel power ratio ( ? 5 mhz) as a function of load power; typical values fig 9. peak-to-average ratio as a function of load power; typical values 0 10 20 30 40 50 60 70 d (%) aaa-001314 g p (db) 0 5 10 15 20 25 30 35 p l (dbm) 36 48 44 40 (1) (2) (3) aaa-001315 -70 -50 -30 -10 p l (dbm) 36 48 44 40 acpr 5m (dbc) (6) (5) (4) (3) (2) (1) aaa-001316 p l (dbm) 36 48 44 40 par (db) 0 2 4 6 8 10 (3) (2) (1)
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 8 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 7.7 test circuit [1] american technical ce ramics type 100a or capacitor of same quality. [2] american technical ce ramics type 800b or capacitor of same quality. printed-circuit board (pcb): taconic rf35; ? r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 ? m. see table 9 for a list of components. fig 10. component layout for class-ab production test circuit aaa-001317 50 mm 60 mm 15 mm 15 mm 18.5 mm 18.5 mm c14 c8 c3 c1 c9 c11 c6 c10 c7 c12 c13 c4 c2 r1 c5 r2 table 9. list of components for test circuit see figure 10 . component description value remarks c1, c2, c9, c10 multilayer ceramic chip capacitor 8.2 pf [1] c3, c4, c6, c7 multilayer ceramic chip capacitor 1 ? fmurata c5, c8 multilayer ceramic chip capacitor 33 pf [2] c11, c12 multilayer ceramic chip capacitor 0.1 ? fmurata c13, c14 electroly tic capacitor 1000 ? f; 50 v r1, r2 chip resistor 5.1 ? vishay dale 0805
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 9 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 8. package outline fig 11. package outline sot1121a references outline version european projection issue date iec jedec jeita sot1121a 09-10-12 10-02-02 flanged ldmost ceramic package; 2 mounting holes; 4 leads sot1121a e 1 q e c d a f d 1 a b c q e h 1 u 1 u 2 h c w 2 b a w 1 b p 2 1 4 5 3 sot1121a_po unit (1) mm max nom min 4.75 3.45 3.94 3.68 0.18 0.10 20.02 19.61 19.96 19.66 9.53 9.27 1.14 0.89 19.94 18.92 3.38 3.12 9.91 9.65 0.25 a dimensions bcdd 1 ee 1 9.53 9.27 fhh 1 12.83 12.57 pq (2) 1.70 1.45 q 27.94 u 1 34.16 33.91 u 2 w 1 0.51 inches max nom min 0.187 0.136 0.155 0.145 0.007 0.004 8.89 e 0.35 0.788 0.772 0.786 0.774 0.375 0.365 0.045 0.035 0.785 0.745 0.133 0.123 0.39 0.38 0.01 0.375 0.365 0.505 0.495 0.067 0.057 1.1 1.345 1.335 0.02 w 2 0 5 10 mm scale note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body.
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 10 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor fig 12. package outline sot1121b references outline version european projection issue date iec jedec jeita sot1121b sot1121b_po 09-10-12 09-12-14 unit (1) mm max nom min 4.75 3.45 3.94 3.68 0.18 0.08 20.02 19.61 19.96 19.66 9.53 9.27 1.14 0.89 19.94 18.92 9.91 9.65 a dimensions note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. earless flanged ldmost ceramic package; 4 leads sot1121b bcdd 1 ee 1 9.53 9.27 fhh 1 12.83 12.57 q 1.70 1.45 u 1 20.70 20.45 u 2 inches max nom min 0.187 0.136 0.155 0.145 0.007 0.003 8.89 e 0.35 0.788 0.772 0.786 0.774 0.375 0.365 0.045 0.035 0.785 0.745 0.39 0.38 0.375 0.365 0.505 0.495 0.067 0.057 0.815 0.805 0.25 0.01 0.51 0.02 w 2 w 3 0 5 10 mm scale d h 1 u 1 a f d 1 d e 1 u 2 h w 3 d w 2 q e c 5 2 1 4 3 e b
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 11 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 9. abbreviations 10. revision history table 10. abbreviations acronym description 3gpp third generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge ldmos laterally diffused metal oxide semiconductor ldmost laterally diffused metal oxide semiconductor transistor par peak-to-average power ratio pdpch transmission power of dedicated physical channel rf radio frequency vswr voltage standing wave ratio w-cdma wideband code division multiple access table 11. revision history document id release date data sheet status change notice supersedes blf7g22l-100p_BLF7G22LS-100P v.2 20111110 preliminary data sheet - blf7g22l-100p_bl f7g22ls-100p v.1 modifications: ? the status of this document has b een changed to preliminary data sheet. ? table 1 on page 1 : several values have been updated ? table 6 on page 3 : several values have been added/updated ? table 7 on page 3 : several values have been added/updated ? section 7.2 , section 7.3 , section 7.4 , section 7.5 , section 7.6 and section 7.7 were added. blf7g22l-100p_BLF7G22LS-100P v.1 20110519 objective data sheet - -
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 12 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 11.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 11.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
blf7g22l-100p_BLF7G22LS-100P all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all righ ts reserved. preliminary data sheet rev. 2 ? 10 november 2011 13 of 14 nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 11.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 12. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors blf7g22l-100p; BLF7G22LS-100P power ldmos transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 10 november 2011 document identifier: blf7g22l-100p_BLF7G22LS-100P please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 13. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 one tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4 one tone cw-pulsed . . . . . . . . . . . . . . . . . . . . 5 7.5 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 6 7.6 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 7 7.7 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 11.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 contact information. . . . . . . . . . . . . . . . . . . . . 13 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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